Faced with rising energy prices, the broadcast industry seeks innovative ways to cut power and operating expenses. Freescale Semiconductor is addressing this market need with a highly efficient RF ...

Nowadays, laterally diffused metal oxide semiconductor (LDMOS) transistors are widely used for RF Power Amplification and in many applications. A simplified circuit of an LDMOS amplifier bias circuit ...

Despite recent improvements in the performance of RF LDMOS field-effect transistors (FETs), temperature drift and aging continue to affect the efficiency and linearization of power amplifiers using ...

Freescale Semiconductor today introduced two LDMOS RF power transistors that allow wireless base station amplifiers to cover all channels in an entire allocated frequency band. The high-efficiency ...

Royal Philips Electronics today announced a major advance in Laterally Diffused MOS (LDMOS) technology that for the first time will allow Wideband-CDMA (W-CDMA) basestation manufacturers to break ...

NXP's Gen8 LDMOS RF power transistors offer more bandwidth, more power, better electrical efficiency in a smaller form factor and at a lower cost. Compared to the previous generation, Gen8 increases ...

I have more information on a breakthrough in high power UHF solid-state amplifier efficiency. Freescale announced last Friday that its MRFE6VP8600H LDMOS RF power transistor can use up to 15 percent ...

Philadelphia, PA. Ampleon at IMS highlighted recently announced products, such as the BLF989 RF power transistor designed for UHF broadcast applications such as DVBT and UHF analog TV and the 200-W ...

NXP has introduced new RF power transistors designed for smart industrial applications, featuring 65 V laterally diffused metal oxide semiconductor(LDMOS) silicon ...