Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...
The following is a special guest post by Dr. Chenming Hu, TSMC Distinguished Professor at UC Berkeley. He and his team published seminal papers on FinFETs (1999) and UTB-SOI (2000). This post first ...
The key electronic component in the integrated circuit (IC) is the planar, bulk metal-oxide semiconductor field-effect transistor (MOSFET). A key driver for the IC industry has been Moore's Law, which ...
The semiconductor industry is currently making a major transition from conventional planar transistors to finFETs starting at 22nm. The question is what’s next? In the lab, IBM, Intel and others have ...
Researchers at Purdue University have reported important progress in developing finFETs, a type of transistor that some say will eventually substitute the silicon-based kind because it allows ...
The demand for smartphones and tablets with better performance and longer battery life has been driving the industry to come up with chips that are faster, smaller and use less power. To remain on ...
When making the transition from planar devices to FinFETs, IP design challenges arise that require education and experience when dealing with the complexities. Since the inception of the ...
With every process node advance, new types of manufacturing defects manifest. These defects are especially prevalent during the early phase. For early adopters, silicon manufacturing tests must evolve ...
“Intel was supposed to have 22nm at the end of this year or Q1 2012. Now this has been moved forward to sometime in 2012,” says Professor Asen Asenov of Glasgow University and Gold Standard ...
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